- Product Model PHB29N08T,118
- Brand NXP Semiconductors
- RoHS No
- Description NEXPERIA PHB29N08T - 27A, 75V, 0
- Categories Single FETs, MOSFETs
-
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- In Stock 4100
Pricing:
- 1 0.47
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 27A (Tc)
- Rds On (Max) @ Id, Vgs 50mOhm @ 14A, 11V
- Power Dissipation (Max) 88W (Tc)
- Vgs(th) (Max) @ Id 5V @ 2mA
- Supplier Device Package D2PAK
- Drive Voltage (Max Rds On, Min Rds On) 11V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 75 V
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
