- Product Model PSMN4R3-80PS,127
- Brand NXP Semiconductors
- RoHS No
- Description NEXPERIA PSMN4R3-80PS - 120A, 80
- Categories Single FETs, MOSFETs
-
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- In Stock 5706
Pricing:
- 1 1.74
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V
- Power Dissipation (Max) 306W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 8161 pF @ 40 V
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
