- Product Model PBSS5230PAP,115
- Brand NXP Semiconductors
- RoHS No
- Description NEXPERIA PBSS5230PAP - SMALL SIG
- Classification Bipolar Transistor Arrays
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Inventory:4790
Technical Details
- Package / Case 6-UDFN Exposed Pad
- Mounting Type Surface Mount
- Transistor Type 2 PNP
- Operating Temperature 150°C (TJ)
- Power - Max 370mW
- Current - Collector (Ic) (Max) 2A
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 390mV @ 200mA, 2A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 260 @ 100mA, 2V
- Frequency - Transition 95MHz
- Supplier Device Package 6-HUSON (2x2)
- Grade Automotive
- Qualification AEC-Q101