- Product Model R6511KND3TL1
- Brand ROHM Semiconductor
- RoHS Yes
- Description HIGH-SPEED SWITCHING, NCH 650V 1
- Classification Single FETs, MOSFETs
Inventory:3995
Pricing:
- 2500 0.99
- 5000 0.96
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Rds On (Max) @ Id, Vgs 400mOhm @ 3.8A, 10V
- Power Dissipation (Max) 124W (Tc)
- Vgs(th) (Max) @ Id 5V @ 320µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V