- Product Model R6504KND3TL1
- Brand ROHM Semiconductor
- RoHS Yes
- Description HIGH-SPEED SWITCHING, NCH 650V 4
- Classification Single FETs, MOSFETs
Inventory:3940
Pricing:
- 2500 0.62
- 5000 0.59
- 12500 0.56
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 1.05Ohm @ 1.5A, 10V
- Power Dissipation (Max) 58W (Tc)
- Vgs(th) (Max) @ Id 5V @ 130µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V
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