- Product Model R6509END3TL1
- Brand ROHM Semiconductor
- RoHS Yes
- Description 650V 9A TO-252, LOW-NOISE POWER
- Classification Single FETs, MOSFETs
Inventory:5940
Pricing:
- 2500 0.98
- 5000 0.94
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 585mOhm @ 2.8A, 10V
- Power Dissipation (Max) 94W (Tc)
- Vgs(th) (Max) @ Id 4V @ 230µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V