- Product Model SIR182LDP-T1-RE3
- Brand Vishay / Siliconix
- RoHS No
- Description N-CHANNEL 60-V (D-S) MOSFET POWE
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.83
- 6000 0.8
- 9000 0.77
Technical Details
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 31.7A (Ta), 130A (Tc)
- Rds On (Max) @ Id, Vgs 2.75mOhm @ 15A, 10V
- Power Dissipation (Max) 5W (Ta), 83W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 30 V
Related Products
MOSFET N-CH 60V 100A TDSON
Inventory: 7850
MOSFET N-CH 150V 155A 8HSOF
Inventory: 2121
MOSFET N-CH 60V 19A/112A TSDSON
Inventory: 6260
MOSFET N-CH 60V 60A PPAK SO-8
Inventory: 8772
N-CHANNEL 60 V (D-S) MOSFET POWE
Inventory: 5583
N-CHANNEL 60-V (D-S) MOSFET POWE
Inventory: 4375
MOSFET N-CH 60V 45.6A/186A PPAK
Inventory: 8970
MOSFET N-CH 60V 60A PPAK SO-8
Inventory: 0
AUTOMOTIVE N-CHANNEL 80 V (D-S)
Inventory: 3039
IC MCU 32BIT 16KB FLASH 28UFQFPN
Inventory: 373
