- Product Model SISH892BDN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description N-CHANNEL 100 V (D-S) MOSFET POW
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.32
- 6000 0.31
- 9000 0.28
- 30000 0.28
Technical Details
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6.8A (Ta), 20A (Tc)
- Rds On (Max) @ Id, Vgs 30.4mOhm @ 10A, 10V
- Power Dissipation (Max) 3.4W (Ta), 29W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Supplier Device Package PowerPAK® SO-8DC
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 26.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 50 V
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