- Product Model SCTH40N120G2V-7
- Brand STMicroelectronics
- RoHS Yes
- Description SILICON CARBIDE POWER MOSFET 120
- Classification Single FETs, MOSFETs
-
PDF
- 1000 12.35
Technical Details
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 18V
- Power Dissipation (Max) 238W (Tc)
- Vgs(th) (Max) @ Id 4.9V @ 1mA
- Supplier Device Package H2PAK-7
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1233 pF @ 800 V
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