- Product Model IPW65R090CFD7XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description HIGH POWER_NEW
- Classification Single FETs, MOSFETs
-
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Inventory:1682
Pricing:
- 1 6.1
- 30 4.87
- 120 4.35
- 510 3.84
- 1020 3.46
- 2010 3.24
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Rds On (Max) @ Id, Vgs 90mOhm @ 12.5A, 10V
- Power Dissipation (Max) 127W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 630µA
- Supplier Device Package PG-TO247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
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