- Product Model SIHD5N80AE-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description E SERIES POWER MOSFET DPAK (TO-2
- Classification Single FETs, MOSFETs
-
PDF
- 1 1.05
- 10 0.86
- 100 0.67
- 500 0.57
- 1000 0.46
- 3000 0.43
- 6000 0.41
- 12000 0.39
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
- Rds On (Max) @ Id, Vgs 1.35Ohm @ 1.5A, 10V
- Power Dissipation (Max) 62.5W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-252AA
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 321 pF @ 100 V
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