- Product Model IAUC100N04S6N028ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description IAUC100N04S6N028ATMA1
- Classification Single FETs, MOSFETs
-
PDF
Inventory:11410
Pricing:
- 5000 0.43
- 10000 0.41
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 2.86mOhm @ 50A, 10V
- Power Dissipation (Max) 62W (Tc)
- Vgs(th) (Max) @ Id 3V @ 24µA
- Supplier Device Package PG-TDSON-8
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 25 V
- Qualification AEC-Q101