- Product Model SIJH112E-T1-GE3
- Brand Vishay / Siliconix
- RoHS No
- Description MOSFET N-CH 100V 23A/225A PPAK
- Classification Single FETs, MOSFETs
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Inventory:3010
Pricing:
- 2000 2.15
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 23A (Ta), 225A (Tc)
- Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V
- Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PowerPAK® 8 x 8
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 8050 pF @ 50 V