- Product Model IPB80P04P405ATMA2
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET P-CH 40V 80A TO263-3
- Classification Single FETs, MOSFETs
-
PDF
- 1000 1.51
- 2000 1.43
- 5000 1.37
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Rds On (Max) @ Id, Vgs 5.2mOhm @ 80A, 10V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PG-TO263-3-2
- Grade Automotive
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 151 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 10300 pF @ 25 V
- Qualification AEC-Q101
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