- Product Model IPD80P03P4L07ATMA2
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET P-CH 30V 80A TO252-31
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.64
- 5000 0.6
- 12500 0.58
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V
- Power Dissipation (Max) 88W (Tc)
- Vgs(th) (Max) @ Id 2V @ 130µA
- Supplier Device Package PG-TO252-3-11
- Grade Automotive
- Vgs (Max) +5V, -16V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 25 V
- Qualification AEC-Q101
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