Technical Details

• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
• Rds On (Max) @ Id, Vgs 468mOhm @ 2A, 18V
• Power Dissipation (Max) 65W (Tc)
• Vgs(th) (Max) @ Id 5.7V @ 1mA
• Supplier Device Package PG-TO263-7-12
• Vgs (Max) +18V, -15V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 5.9 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 800 V