- Product Model PBSS4230PANP,115
- Brand NXP Semiconductors
- RoHS No
- Description NOW NEXPERIA PBSS4230PANP - SMAL
- Classification Bipolar Transistor Arrays
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Inventory:22500
Technical Details
- Package / Case 6-UFDFN Exposed Pad
- Mounting Type Surface Mount
- Transistor Type 1 NPN, 1 PNP
- Operating Temperature 150°C (TJ)
- Power - Max 510mW
- Current - Collector (Ic) (Max) 2A
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 290mV @ 200mA, 2A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
- Frequency - Transition 120MHz
- Supplier Device Package 6-HUSON (2x2)