- Product Model PMCM6501VPEZ
- Brand NXP Semiconductors
- RoHS No
- Description SMALL SIGNAL FIELD-EFFECT TRANSI
- Classification Single FETs, MOSFETs
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Inventory:7775386
Technical Details
- Package / Case 6-XFBGA, WLCSP
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
- Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 4.5V
- Power Dissipation (Max) 556mW (Ta), 12.5W (Tc)
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Supplier Device Package 6-WLCSP (1.48x0.98)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 12 V
- Gate Charge (Qg) (Max) @ Vgs 29.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 6 V