- Product Model FCH041N65EFL4
- Brand Fairchild Semiconductor
- RoHS No
- Description POWER FIELD-EFFECT TRANSISTOR, N
- Classification Single FETs, MOSFETs
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Inventory:1732
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 76A (Tc)
- Rds On (Max) @ Id, Vgs 41mOhm @ 38A, 10V
- Power Dissipation (Max) 595W (Tc)
- Vgs(th) (Max) @ Id 5V @ 7.6mA
- Supplier Device Package TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 298 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 12560 pF @ 100 V