- Product Model BC847CQAZ
- Brand NXP Semiconductors
- RoHS No
- Description BC847 - TRANSISTORS NOT PHOTOSEN
- Classification Single Bipolar Transistors
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Inventory:85840
Technical Details
- Package / Case 3-XDFN Exposed Pad
- Mounting Type Surface Mount
- Transistor Type NPN
- Operating Temperature 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
- Frequency - Transition 100MHz
- Supplier Device Package DFN1010D-3
- Grade Automotive
- Current - Collector (Ic) (Max) 100 mA
- Voltage - Collector Emitter Breakdown (Max) 45 V
- Power - Max 280 mW
- Qualification AEC-Q101