- Product Model IPBE65R230CFD7AATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 11A TO263-7
- Classification Single FETs, MOSFETs
-
PDF
- 1000 1.77
- 2000 1.67
- 5000 1.6
Technical Details
- Package / Case TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Rds On (Max) @ Id, Vgs 230mOhm @ 5.2A, 10V
- Power Dissipation (Max) 63W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 260µA
- Supplier Device Package PG-TO263-7-3-10
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1044 pF @ 400 V
- Qualification AEC-Q101
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