- Product Model SISS52DN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 30V 47.1A/162A PPAK
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.42
- 6000 0.4
- 9000 0.38
Technical Details
- Package / Case PowerPAK® 1212-8SH
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 47.1A (Ta), 162A (Tc)
- Rds On (Max) @ Id, Vgs 1.2mOhm @ 20A, 10V
- Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Supplier Device Package PowerPAK® 1212-8SH
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) +16V, -12V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 15 V
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