- Product Model SIHB15N80AE-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 800V 13A D2PAK
- Classification Single FETs, MOSFETs
-
PDF
- 1 2.62
- 50 2.11
- 100 1.73
- 500 1.47
- 1000 1.24
- 2000 1.18
- 5000 1.14
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Rds On (Max) @ Id, Vgs 350mOhm @ 7.5A, 10V
- Power Dissipation (Max) 156W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1093 pF @ 100 V
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