- Product Model SIHD11N80AE-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 800V 8A TO252AA
- Classification Single FETs, MOSFETs
-
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Inventory:1500
Pricing:
- 1 1.73
- 75 1.39
- 150 1.14
- 525 0.97
- 1050 0.82
- 2025 0.78
- 5025 0.75
- 10050 0.73
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 8A (Tc)
- Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V
- Power Dissipation (Max) 78W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-252AA
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 804 pF @ 100 V
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