- Product Model FDP18N50
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 500V 18A TO220-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 2.7
- 50 2.14
- 100 1.84
- 500 1.63
- 1000 1.4
- 2000 1.32
- 5000 1.26
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 265mOhm @ 9A, 10V
- Power Dissipation (Max) 235W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 500 V
- Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2860 pF @ 25 V
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