Technical Details

• Package / Case DirectFET™ Isometric SQ
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 19A (Ta), 74A (Tc)
• Rds On (Max) @ Id, Vgs 3.7mOhm @ 19A, 10V
• Power Dissipation (Max) 2.1W (Ta), 32W (Tc)
• Vgs(th) (Max) @ Id 2.1V @ 35µA
• Supplier Device Package DirectFET™ Isometric SQ
• Vgs (Max) ±16V
• Drain to Source Voltage (Vdss) 25 V
• Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 1590 pF @ 13 V