- Product Model IRF820
- Brand Harris Corporation
- RoHS No
- Description 2.5A, 500V, 3.000 OHM, N-CHANNEL
- Classification Single FETs, MOSFETs
-
PDF
Inventory:5395
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
- Power Dissipation (Max) 80W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 500 V
- Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 25 V