- Product Model RM12N650T2
- Brand Rectron USA
- RoHS Yes
- Description MOSFET N-CH 650V 11.5A TO220-3
- Classification Single FETs, MOSFETs
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Inventory:3500
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
- Rds On (Max) @ Id, Vgs 360mOhm @ 7A, 10V
- Power Dissipation (Max) 101W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 50 V