Technical Details

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 33A (Ta), 287A (Tc)
• Rds On (Max) @ Id, Vgs 1.56mOhm @ 80A, 10V
• Power Dissipation (Max) 3.3W (Ta), 250W (Tc)
• Vgs(th) (Max) @ Id 4V @ 650µA
• Supplier Device Package 8-TDFNW (8.3x8.4)
• Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 80 V
• Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 10400 pF @ 40 V