Technical Details

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 2.9A (Tj)
• Rds On (Max) @ Id, Vgs 120mOhm @ 2.9A, 10V
• Power Dissipation (Max) 1.8W (Ta)
• Vgs(th) (Max) @ Id 4V @ 20µA
• Supplier Device Package PG-SOT223-4-21
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V