- Product Model IRFW840BTM
- Brand Fairchild Semiconductor
- RoHS Yes
- Description N-CHANNEL POWER MOSFET
- Classification Single FETs, MOSFETs
-
PDF
Inventory:3966
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 8A (Tc)
- Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V
- Power Dissipation (Max) 3.13W (Ta), 134W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 500 V
- Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V