Technical Details

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 60mA, 300mA
• Current - Collector Cutoff (Max) 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA, 5V
• Frequency - Transition 28MHz
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 600 V
• Power - Max 1 W