- Product Model IRF626
- Brand Harris Corporation
- RoHS No
- Description N-CHANNEL POWER MOSFET
- Classification Single FETs, MOSFETs
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Inventory:2497
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
- Rds On (Max) @ Id, Vgs 1.1Ohm @ 1.4A, 10V
- Power Dissipation (Max) 40W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 275 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V