Inventory:2000

Technical Details

  • Package / Case TO-220-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
  • Rds On (Max) @ Id, Vgs 520mOhm @ 3.8A, 10V
  • Power Dissipation (Max) 66W (Tc)
  • Vgs(th) (Max) @ Id 3.5V @ 250µA
  • Supplier Device Package PG-TO220-3-1
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 600 V
  • Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 100 V

Related Products


N-CHANNEL ENHANCEMENT MODE MOSFE

Inventory: 31931

DIODE GEN PURP 600V 8A TO220AC

Inventory: 9868

MOSFET N-CH 100V 43A TO220-3

Inventory: 140

IC REG LINEAR 3.3V 1A SOT223-4

Inventory: 10486

Top