Technical Details

• Package / Case DirectFET™ Isometric SQ
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 13A (Ta), 57A (Tc)
• Rds On (Max) @ Id, Vgs 7.8mOhm @ 13A, 10V
• Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
• Vgs(th) (Max) @ Id 2.35V @ 25µA
• Supplier Device Package DIRECTFET™ SQ
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 15 V