Technical Details

• Package / Case DirectFET™ Isometric MT
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 31A (Ta), 150A (Tc)
• Rds On (Max) @ Id, Vgs 2mOhm @ 31A, 10V
• Power Dissipation (Max) 1.8W (Ta), 89W (Tc)
• Vgs(th) (Max) @ Id 2.45V @ 250µA
• Supplier Device Package DIRECTFET™ MT
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 69 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 6290 pF @ 10 V