Technical Details

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 5A (Ta)
• Rds On (Max) @ Id, Vgs 3.6Ohm @ 2A, 10V
• Power Dissipation (Max) 120W (Tc)
• Vgs(th) (Max) @ Id 3V @ 1mA
• Supplier Device Package TO-3P
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 900 V
• Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 20 V