- Product Model PHK4NQ10T,518
- Brand NXP Semiconductors
- RoHS Yes
- Description MOSFET N-CH 100V 8SO
- Classification Single FETs, MOSFETs
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Inventory:1500
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -65°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Rds On (Max) @ Id, Vgs 70mOhm @ 4A, 10V
- Power Dissipation (Max) 2.5W (Ta)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package 8-SO
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V