- Product Model SISS63DN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET P-CH 20V 35.1/127.5A PPAK
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.4
- 6000 0.38
- 9000 0.36
Technical Details
- Package / Case PowerPAK® 1212-8S
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 35.1A (Ta), 127.5A (Tc)
- Rds On (Max) @ Id, Vgs 2.7mOhm @ 15A, 10V
- Power Dissipation (Max) 5W (Ta), 65.8W (Tc)
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Supplier Device Package PowerPAK® 1212-8S
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 236 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds 7080 pF @ 10 V
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