Technical Details

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Operating Temperature -65°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
• Rds On (Max) @ Id, Vgs 17Ohm @ 170mA, 10V
• Power Dissipation (Max) 1W (Ta)
• Vgs(th) (Max) @ Id 2.55V @ 1mA
• Supplier Device Package TO-92-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 300 V
• Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 25 V