Technical Details

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3A (Tc)
• Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
• Power Dissipation (Max) 1.65W (Ta)
• Vgs(th) (Max) @ Id 2.8V @ 1mA
• Supplier Device Package SOT-223
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 20 V