Technical Details

• Package / Case 6-WDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 2A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A, 1.5V
• Supplier Device Package 6-MicroFET (2x2)
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 35 V
• Power - Max 1.56 W