- Product Model FDP33N25
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 250V 33A TO220-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 2
- 50 1.61
- 100 1.32
- 500 1.12
- 1000 0.95
- 2000 0.9
- 5000 0.87
- 10000 0.84
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V
- Power Dissipation (Max) 235W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 250 V
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2135 pF @ 25 V
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