- Product Model FQP8N80C
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 800V 8A TO220-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 3.05
- 50 2.41
- 100 2.07
- 500 1.84
- 1000 1.58
- 2000 1.48
- 5000 1.42
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 8A (Tc)
- Rds On (Max) @ Id, Vgs 1.55Ohm @ 4A, 10V
- Power Dissipation (Max) 178W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 25 V
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