- Product Model FQB4N80TM
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 800V 3.9A D2PAK
- Classification Single FETs, MOSFETs
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Inventory:2069
Pricing:
- 800 1.23
- 1600 1.04
- 2400 0.99
- 5600 0.95
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
- Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V
- Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V