- Product Model RQ3E100ATTB
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET P-CH 30V 10A/31A 8HSMT
- Classification Single FETs, MOSFETs
- 3000 0.35
- 6000 0.33
- 9000 0.32
- 30000 0.32
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Ta), 31A (Tc)
- Rds On (Max) @ Id, Vgs 11.4mOhm @ 10A, 10V
- Power Dissipation (Max) 2W (Ta)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package 8-HSMT (3.2x3)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 15 V
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