Inventory:1915

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 131A (Tc)
  • Rds On (Max) @ Id, Vgs 19mOhm @ 40A, 20V
  • Power Dissipation (Max) 400W (Tc)
  • Vgs(th) (Max) @ Id 2.4V @ 1mA
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs (Max) +25V, -10V
  • Drain to Source Voltage (Vdss) 700 V
  • Gate Charge (Qg) (Max) @ Vgs 215 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 700 V

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