- Product Model ISP75DP06LMXTSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET P-CH 60V 1.1A SOT223-4
- Classification Single FETs, MOSFETs
-
PDF
- 1000 0.25
- 2000 0.22
- 5000 0.21
- 10000 0.19
- 25000 0.19
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
- Rds On (Max) @ Id, Vgs 750mOhm @ 1.1A, 10V
- Power Dissipation (Max) 1.8W (Ta), 4.2W (Tc)
- Vgs(th) (Max) @ Id 2V @ 77µA
- Supplier Device Package PG-SOT223-4
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 30 V
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