• 库存 2630
定价:
  • 1 127.56
  • 30 113.77

技术参数

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 95A (Tc)
  • Rds On (Max) @ Id, Vgs 28.6mOhm @ 36A, 18V
  • Power Dissipation (Max) 427W
  • Vgs(th) (Max) @ Id 5.6V @ 18.2mA
  • Supplier Device Package TO-247N
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +22V, -4V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 178 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 2879 pF @ 800 V
  • Qualification AEC-Q101
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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