• 库存 6442
定价:
  • 1 38.37
  • 30 31.81
  • 120 29.82

技术参数

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 40A (Tc)
  • Rds On (Max) @ Id, Vgs 117mOhm @ 10A, 18V
  • Vgs(th) (Max) @ Id 4V @ 4.4mA
  • Supplier Device Package TO-247N
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +22V, -6V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 106 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 800 V
  • Qualification AEC-Q101
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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